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| QFET FQD2N60 / FQU2N60 BM02N60 General Description These N-Channel enhancement mode power field effect transistors are produced using BooklyMicro proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Features * * * * * * 2.0A, 600V, RDS(on) = 4.7 @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D-PAK FQD Series I-PAK GDS FQU Series G! !" " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed (Note 1) BM02N60 600 2.0 1.26 8.0 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * Power Dissipation (TC = 25C) 140 2.0 4.5 4.5 2.5 45 0.36 -55 to +150 300 TJ, TSTG TL - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8from case for 5 seconds Thermal Characteristics Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 2.78 50 110 Units CW CW CW * When mounted on the minimum pad size recommended (PCB Mount) BM02N60 Electrical CharacteristicsT Symbol Parameter C = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.4 ------10 100 100 -100 V V/C A A nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 1.0 A VDS = 50 V, ID = 1.0 A (Note 4) 3.0 --- -3.7 2.25 5.0 4.7 -- V S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---270 40 5 350 50 7 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 2.4 A, VGS = 10 V (Note 4, 5) VDD = 300 V, ID = 2.4 A, RG = 25 (Note 4, 5) -------- 10 25 20 25 9.0 1.6 4.3 30 60 50 60 11 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 2.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 2.4 A, dIF / dt = 100 A/s (Note 4) ------ ---180 0.72 2.0 8.0 1.4 --- A A V ns C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 64mH, IAS = 2.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 2.4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature Rev. A, April 2003 Typical Characteristics ID , Drain Current [A] 10 0 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 150 10 0 25 -55 10 -1 Notes : 1. 250 Pulse Test s 2. TC = 25 Notes : 1. VDS = 50V 2. 250 Pulse Test s 10 -2 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 12 10 VGS = 10V VGS = 20V RDS(ON) [ ], Drain-Source On-Resistance 8 IDR , Reverse Drain Current [A] 6 10 0 4 150 25 Notes : 1. VGS = 0V 2. 250 Pulse Test s 2 Note : TJ = 25 0 0 1 2 3 4 5 6 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 VDS = 120V 10 400 VDS = 300V VDS = 480V Ciss VGS , Gate-Source Voltage [V] 8 Capacitance [pF] 300 Coss 6 200 Crss 100 Notes : 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID = 2.4A 0 -1 10 0 10 0 10 1 0 2 4 6 8 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Typical Characteristics (Continued) 1.2 3.0 2.5 BV DSS , (Norm alized) Drain-Source Breakdown Voltage RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 2.0 1.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 1.2 A 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.0 Operation in This Area is Limited by R DS(on) 10 1 10 s 100 s 1.5 ID, Drain Current [A] 1 ms 10 0 10 ms DC ID, Drain Current [A] 1.0 10 -1 Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 0.5 10 -2 10 0 0.0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature ( t) , T h e r m a l R e s p o n s e D = 0 .5 10 0 0 .2 0 .1 0 .0 5 10 -1 N o te s : 1 . Z J C ( t) = 2 .7 8 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .0 2 0 .0 1 s i n g l e p u ls e PDM t1 t2 Z JC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve 50K 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V Qgs Qgd VGS DUT 3mA Charge VDS VGS RG RL VDD VDS 90% 10V DUT VGS 10% td(on) t on tr td(off) t off tf L VDS ID RG VDD DUT tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS ID (t) VDD tp 10V VDS (t) Time DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop DPAK 6.60 0.20 5.34 0.30 (0.50) (4.34) (0.50) 0.70 0.20 2.30 0.10 0.50 0.10 0.60 0.20 6.10 0.20 2.70 0.20 9.50 0.30 0.91 0.10 0.80 0.20 MAX0.96 2.30TYP [2.300.20] 0.76 0.10 2.30TYP [2.300.20] 0.89 0.10 0.50 0.10 1.02 0.20 2.30 0.20 (0.70) (0.90) (0.10) (3.05) 6.10 0.20 9.50 0.30 2.70 0.20 (2XR0.25) 0.76 0.10 (1.00) 6.60 0.20 (5.34) (5.04) (1.50) MIN0.55 IPAK (TO251) 6.60 0.20 5.34 0.20 (0.50) (4.34) (0.50) 0.50 0.10 2.30 0.20 0.60 0.20 0.70 0.20 0.80 0.10 6.10 0.20 1.80 0.20 MAX0.96 0.76 0.10 9.30 0.30 2.30TYP [2.300.20] 2.30TYP [2.300.20] 0.50 0.10 16.10 0.30 |
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